Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design, and Applications (Woodhead Publishing Series in Electronic and Optical Materials)

Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design,

Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applicationsAddresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliabilityProvides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact

  • ASIN: B07JNNGQY2

Wide Bandgap Semiconductor Spintronics

Wide Bandgap Semiconductor

This book is focused on the spintronic properties of III–V nitride semiconductors. Particular attention is paid to the comparison between zinc blende GaAs- and wurtzite GaN-based structures, where the Rashba spin–orbit interaction plays a crucial role in voltage-controlled spin engineering. The book also deals with topological insulators, a new class of materials that could deliver sizable Rashba spin splitting in the surface electron spectrum. Electrically driven zero-magnetic-field spin splitting of surface electrons is discussed with respect to the specifics of electron-localized spin interaction and voltage-controlled ferromagnetism. The book covers generic topics in spintronics without entering into device specifics, since the overall goal of the enterprise is to provide theoretical background for most common concepts of spin-electron physics and give instructions to be used in solving problems of a general and specific nature. The book is intended for graduate students and may serve as an introductory course in this specific field of solid-state theory and applications.

  • ASIN: B01DLRHXC6

Characterization of Wide Bandgap Power Semiconductor Devices (Energy Engineering)

Characterization of Wide Bandgap Power Semiconductor Devices (Energy

At the heart of modern power electronics converters are power semiconductor switching devices. The emergence of wide bandgap (WBG) semiconductor devices, including silicon carbide and gallium nitride, promises power electronics converters with higher efficiency, smaller size, lighter weight, and lower cost than converters using the established silicon-based devices. However, WBG devices pose new challenges for converter design and require more careful characterization, in particular due to their fast switching speed and more stringent need for protection. Characterization of Wide Bandgap Power Semiconductor Devices presents comprehensive methods with examples for the characterization of this important class of power devices. After an introduction, the book covers pulsed static characterization; junction capacitance characterization; fundamentals of dynamic characterization; gate drive for dynamic characterization; layout design and parasitic management; protection design for double pulse test; measurement and data processing for dynamic characterization; cross-talk consideration; impact of three-phase system; and topology considerations.

  • ASIN: 1785614916

Voltage References Prec 2.5V Bandgap Reference Pack of 10 (LT1019ACS8-2.5#TRPBF)

Voltage References Prec 2.5V Bandgap Reference Pack of

Features: Reference Type: : Shunt Precision References Output Voltage: : 2.5 V Initial Accuracy: : 0.05 % Temperature Coefficient: : 5 PPM / C Series VREF - Input Voltage - Max: : 40 V Shunt Current - Max: : 10 mA Maximum Operating Temperature: : + 70 C Minimum Operating Temperature: : 0 C Series: : LT1019 Packaging: : Cut Tape Packaging: : MouseReel Packaging: : Reel Height: : 1.75 mm Input Voltage: : 15 V Brand: : Analog Devices Shunt Current - Min: : 0.5 mA Shutdown: : No Shutdown Product Type: : Voltage References Factory Pack Quantity: : 2500 Subcategory: : PMIC - Power Management ICs

  • ASIN: B07QC5PDXT

LM385 Series Micropower 2-Terminal Bandgap Voltage Regulator Diode SOIC-8, Pack of 50 (LM385D-2.5G)

LM385 Series Micropower 2-Terminal Bandgap Voltage Regulator Diode

LM385 Series Micropower 2-Terminal Bandgap Voltage Regulator Diode SOIC-8 (LM385D-2.5G)

  • ASIN: B07RW5RDCD

Wide Bandgap Power Semiconductor Packaging: Materials, Components, and Reliability (Woodhead Publishing Series in Electronic and Optical Materials)

Wide Bandgap Power Semiconductor Packaging: Materials, Components, and

Wide Bandgap Power Semiconductor Packaging: Materials, Components, and Reliability addresses the key challenges that WBG power semiconductors face during integration, including heat resistance, heat dissipation and thermal stress, noise reduction at high frequency and discrete components, and challenges in interfacing, metallization, plating, bonding and wiring. Experts on the topic present the latest research on materials, components and methods of reliability and evaluation for WBG power semiconductors and suggest solutions to pave the way for integration. As wide bandgap (WBG) power semiconductors, SiC and GaN, are the latest promising electric conversion devices because of their excellent features, such as high breakdown voltage, high frequency capability, and high heat-resistance beyond 200 C, this book is a timely resource on the topic. Examines the key challenges of wide bandgap power semiconductor packaging at various levels, including materials, components and device performance Provides the latest research on potential solutions, with an eye towards the end goal of system integration Discusses key problems, such as thermal management, noise reduction, challenges in interconnects and substrates

  • ASIN: 0081020945

Ultra-wide Bandgap Semiconductor Materials (Materials Today)

Ultra-wide Bandgap Semiconductor Materials (Materials

Ultra-wide Bandgap Semiconductors (UWBG) covers the most recent progress in UWBG materials, including sections on high-Al-content AlGaN, diamond, B-Ga2O3, and boron nitrides. The coverage of these materials is comprehensive, addressing materials growth, physics properties, doping, device design, fabrication and performance. The most relevant and important applications are covered, including power electronics, RF electronics and DUV optoelectronics. There is also a chapter on novel structures based on UWBG, such as the heterojunctions, the low-dimensional structures, and their devices. This book is ideal for materials scientists and engineers in academia and R&D searching for materials superior to silicon carbide and gallium nitride.Provides a one-stop resource on the most promising ultra-wide bandgap semiconducting materials, including high-Al-content AlGaN, diamond, β-Ga2O3, boron nitrides, and low-dimensional materialsPresents comprehensive coverage, from materials growth and properties, to device design, fabrication and performanceFeatures the most relevant applications, including power electronics, RF electronics and DUV optoelectronics

  • ASIN: B07TFTD364

Wide Bandgap Semiconductors: Fundamental Properties and Modern Photonic and Electronic Devices (Nonprofit and Civil Society Studies)

Wide Bandgap Semiconductors: Fundamental Properties and Modern Photonic

This book offers a comprehensive overview of the development, current state, and future prospects of wide bandgap semiconductor materials and related optoelectronics devices. With 901 references, 333 figures and 21 tables, this book will serve as a one-stop source of knowledge on wide bandgap semiconductors and related optoelectronics devices.

  • ASIN: B00199CSCO

Voltage References Prec 2.5V Bandgap Reference Pack of 10 (LT1019ACS8-2.5#PBF)

Voltage References Prec 2.5V Bandgap Reference Pack of

Features: Reference Type: : Shunt Precision References Output Voltage: : 2.5 V Initial Accuracy: : 0.05 % Temperature Coefficient: : 5 PPM/C Series VREF - Input Voltage - Max: : 40 V Maximum Operating Temperature: : + 70 C Minimum Operating Temperature: : 0 C Series: : LT1019 Packaging: : Tube Height: : 1.75 mm Brand: : Analog Devices Shutdown: : No Shutdown Supply Current - Max: : 1.3 mA Operating Supply Current: : 650 uA Product Type: : Voltage References Factory Pack Quantity: : 100 Subcategory: : PMIC - Power Management ICs Unit Weight: : 0.003527 oz

  • ASIN: B07QC5NRKJ

ON SEMICONDUCTOR LM385D-2.5G LM385 Series Micropower 2-Terminal Bandgap Voltage Regulator Diode SOIC-8 - 50 item(s)

ON SEMICONDUCTOR LM385D-2.5G LM385 Series Micropower 2-Terminal Bandgap

LM385 Series Micropower 2-Terminal Bandgap Voltage Regulator Diode SOIC-8 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****

  • Brand: ON Semiconductor
  • ASIN: B071FZL6YJ

Nitride Wide Bandgap Semiconductor Material and Electronic Devices

Nitride Wide Bandgap Semiconductor Material and Electronic

This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.

  • ASIN: B01MQDQMP0

Properties of Wide Bandgap Ii-VI Semiconductors (E M I S DATAREVIEWS SERIES)

Properties of Wide Bandgap Ii-VI Semiconductors (E M

Semiconductors comprising elements from groups II and VI of the periodic table and having a large energy gap (e.g. ZnSe) are generating intense R&D activity world-wide largely as a result of their blue green diodes. To review the accumulating knowledge and provide an up-to-date state-of-the-art picture 34 scientists from leading research groups in the USA, Europe and Japan have pooled their knowledge under the editorship of Dr. Bhargava. The book is illustrated, structured for reference and deeply indexed.

  • ASIN: 0852968825

SUKEQ USB Charger Doctor Current Voltage Monitor Charging Detector Dual USB Multi Tester for Phone Charger, Power Bank

SUKEQ USB Charger Doctor Current Voltage Monitor Charging

  • Color: Green
  • Brand: SUKEQ
  • ASIN: B07C7CKK2T
  • UPC: 642568857957

LDO Voltage Regulators LOW NOISE SUB- BANDGAP PSOP 8 LD (1 piece)

LDO Voltage Regulators LOW NOISE SUB- BANDGAP PSOP

  • ASIN: B00MMXZ2J2

Voltage References PbFree,Precision 1.50V Low Volt. Bandgap Reference,?0.2%,-40 Pack of 10 (ISL21010CFH315Z-T7A)

Voltage References PbFree,Precision 1.50V Low Volt. Bandgap Reference,?0.2%,-40

Features: Factory Pack Quantity: : 250 Subcategory: : PMIC - Power Management ICs Unit Weight: : 0.000635 oz

  • ASIN: B07QB5YJFZ

Wide-Bandgap Semiconductors for High Power, High Frequency and High Temperature: Volume 512 (MRS Proceedings)

Wide-Bandgap Semiconductors for High Power, High Frequency and

Wide-bandgap semiconductors have a long and illustrious history, starting with the first paper on SiC light-emitting diodes published in 1907. Since then, interest in wide-bandgap semiconductors has skyrocketed. Improved material quality, important breakthroughs both in SiC and GaN technologies, and the emergence of blue GaN-based lasers, have stimulated this progress. To provide a fairly complete picture of this important field, most of the work presented at the conference is included in the volume. In addition, invited papers present an excellent overview of the current state of the art and offer projections for future developments. Topics include: GaN materials and devices; crystal growth; SiC materials and devices; characterization of wide-bandgap semiconductors; and processing characterization and properties of wide-bandgap materials.

  • ASIN: 1558994181

Lascar DPM 2000 3-1/2 Digit LCD Voltmeter, Annunciators, Bandgap

Lascar DPM 2000 3-1/2 Digit LCD Voltmeter, Annunciators,

The DPM 2000 is a 3½ digit LCD voltmeter with 12.5mm (0.5") digit height. It features 200mV D.Sc. full scale reading, a bandgap reference, auto-zero, auto-polarity and a set of annunciators. The meter plugs directly into a DIL socket or can be panel mounted using the bezel and window. Connection to the meter is via two rows of pins.

  • Brand: Lascar
  • ASIN: B00LT1T9GU

Wide Band-Gap Semiconductors: Volume 242 (MRS Proceedings)

Wide Band-Gap Semiconductors: Volume 242 (MRS

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

  • ASIN: 1558991360

Economic PID Temperature Controller for Sous Vide, Cooling (Black)

Economic PID Temperature Controller for Sous Vide, Cooling

This economical plug-n-play temperature controller can be used for sous vide cooking, and other low temperature heating control. It offers PID mode for heating control as well as on/off control mode. The PID mode is suited for precision temperature control such as sous vide cooking. The on/off control is suited for controlling devices that does not like to be switched too frequently such as the compressor of the refrigerator. This controller uses electromechanical relay for the power output switching. Although the electromechanical relay makes a little click switching sound and is not as long lasting as the sold state relay (SSR), it does not require a heat dissipation device as the SSR does. Using the electromechanical relay significantly reduces the size of the controller and the its cost. It is perfect for occasionally sous vide cooker and refrigerator applications. A digital silicon band gap sensor is used for this controller. It can be immersed over extended period of time. It also has a more uniform accuracy over an entire specified temperature range. Note: This product has been changed to ECT-100A. Specification: Temperature Control Range:-50 ~ 105°C, -58 ~ 221°F Temperature Resolution: 1 °F . or1 °C Temperature Accuracy: 0.5 °C or 0.9 °F Temperature Contro...

  • Color: Black
  • Brand: Auber Instruments
  • ASIN: B00TKPK9G6
  • UPC: 700220579507

Lljin USB Charger Doctor Voltage Current Meter Mobile Battery Tester Power Detector

Lljin USB Charger Doctor Voltage Current Meter Mobile

Resolution : Voltage 10mV current 1mA Full scale drop : ( When measuring current ) 200mV 1, USB powered devices can be used to measure air , voltage loads , USB terminal equipment working voltage and current . 2, The current and voltage cycle , easy to use and practical. 3, Compact and easy to carry , no additional power supply Package Included: 1PC*usb charger doctor

  • Color: White
  • Brand: Lljin
  • ASIN: B07P3H93XY
  • UPC: 761310023799

Lascar DPM 750S-BL 3 1/2-Digit LCD Meter w/200 mV DC, LED backlit, Bandgap Ref.

Lascar DPM 750S-BL 3 1/2-Digit LCD Meter w/200

The DPM 750S-BL features a 200 mV DC measurement range with auto-zero and auto-polarity. Decimal points are user selectable. The meter features a negative rail generator which enables the meter to measure a signal referenced to its own power supply GND. A low drift bandgap reference circuit ensures accurate readings over a wide temperature range. LED backlighting ensures excellent readability under low light conditions. This module is supplied with a plastic mounting bezel. A waterproof seal to IP67 / NEMA 4X is achievable, using the optional BEZ 700-IP bezel.

  • Brand: Lascar Electronics
  • ASIN: B00UZENC0G

Gallium Nitride and Silicon Carbide Power Devices

Gallium Nitride and Silicon Carbide Power

During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made by the growth of the material on silicon substrates have gained a lot of interest. Power device products made from these materials have become available during the last five years from many companies.This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics industry and as a textbook for a power device or power electronics course in universities. Request Inspection Copy

  • ASIN: B01N1V5BU2

Voltage References 10V uP Prec Series Bandgap Ref, Pack of 25 (LT1460DCS8-10#PBF)

Voltage References 10V uP Prec Series Bandgap Ref,

Reference Type: : Series Precision References Output Voltage: : 10 V Initial Accuracy: : 0.1 Temperature Coefficient: : 20 PPM / C Series VREF - Input Voltage - Max: : 20 V Shunt Current - Max: : 40 mA Maximum Operating Temperature: : + 70 C Minimum Operating Temperature: : 0 C Series: : LT1460 Packaging: : Tube Height: : 1.75 mm Brand: : Analog Devices Shutdown: : No Shutdown Supply Current - Max: : 350 uA Maximum Output Voltage: : 10.01 V Operating Supply Current: : 215 uA Product Type: : Voltage References Factory Pack Quantity:: 100 Subcategory: : PMIC - Power Management ICs Unit Weight: : 0.192772 oz

  • ASIN: B07QJW6V83

Semiconductor Manufacturing Handbook, Second Edition

Semiconductor Manufacturing Handbook, Second

Publisher's Note: Products purchased from Third Party sellers are not guaranteed by the publisher for quality, authenticity, or access to any online entitlements included with the product.Thoroughly Revised, State-of-the-Art Semiconductor Design, Manufacturing, and Operations InformationWritten by 70 international experts and reviewed by a seasoned technical advisory board, this fully updated resource clearly explains the cutting-edge processes used in the design and fabrication of IC chips, MEMS, sensors, and other electronic devices. Semiconductor Manufacturing Handbook, Second Edition, covers the emerging technologies that enable the Internet of Things, the Industrial Internet of Things, data analytics, artificial intelligence, augmented reality, and and smart manufacturing. You will get complete details on semiconductor fundamentals, front- and back-end processes, nanotechnology, photovoltaics, gases and chemicals, fab yield, and operations and facilities.•Nanotechnology and microsystems manufacturing•FinFET and nanoscale silicide formation•Physical design for high-performance, low-power 3D circuits•Epitaxi, anneals, RTP, and oxidation•Microlithography, etching, and ion implantations•Physical, chemical, electrochemical, and atomic layer vapor deposition•Chemical...

  • ASIN: 125958769X
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